The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Sep. 14, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jiun-Ming Kuo, Taipei, TW;

Hsin-Chih Chen, New Taipei, TW;

Che-Yuan Hsu, Hsinchu, TW;

Kuo-Chin Liu, Hualien County, TW;

Han-Yu Tsai, Hsinchu, TW;

You-Ting Lin, Miaoli county, TW;

Jen-Hong Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 21/3065 (2013.01); H01L 29/66795 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.


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