The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Aug. 19, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jian-Sing Li, Hsinchu, TW;

Guo-Huei Wu, Tainan, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Chih-Liang Chen, Hsinchu, TW;

Li-Chun Tien, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/786 (2006.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/392 (2020.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0922 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01);
Abstract

An integrated circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor includes a first active area extending in a first direction in a first layer. The second transistor includes a second active area that is disposed in a second layer below the first layer and overlaps the first active area. The third transistor includes at least two third active areas extending in the first direction in the first layer. In the first direction, a boundary line of one of the at least two third active areas is aligned with boundary lines of the first and second active areas. The fourth transistor includes at least two fourth active areas that are disposed in the second layer and overlap the at least two third active areas.


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