The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Jan. 12, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yen Lin Leow, Phoenix, AZ (US);

Xinning Luan, Tempe, AZ (US);

Hui Chen, San Jose, CA (US);

Kirk Allen Fisher, Tempe, AZ (US);

Shawn Thomas, Chesterfield, MO (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 29/36 (2006.01); C30B 29/68 (2006.01); C30B 25/18 (2006.01); C30B 25/10 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/36 (2013.01); C30B 29/68 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.


Find Patent Forward Citations

Loading…