The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Sep. 08, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Haitao Liu, Boise, ID (US);
Chandra Mouli, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/763 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/40114 (2019.08); G11C 16/0483 (2013.01); H01L 21/763 (2013.01); G11C 16/0458 (2013.01);
Abstract
Field-effect transistors, and methods of forming such field-effect transistors, including a gate dielectric overlying a semiconductor material, and a control gate overlying the gate dielectric, wherein the control gate includes an instance of a first polycrystalline silicon-containing material consisting essentially of polycrystalline silicon, and an instance of a second polycrystalline silicon-containing material selected from a group consisting of polycrystalline silicon-germanium and polycrystalline silicon-germanium-carbon.