The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Nov. 04, 2020
Applicant:
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Inventors:
Takao Abe, Annaka, JP;
Tsuyoshi Ohtsuki, Annaka, JP;
Assignee:
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); C30B 29/06 (2013.01); H01L 27/14692 (2013.01); H01L 27/1462 (2013.01);
Abstract
The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×10atoms/cmor less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.