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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11823960 B1

PDFFull Text
Date of Patent:
Nov. 21, 2023

Filed:

Oct. 26, 2020

Method for forming semiconductor structure with high aspect ratio

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Han-Pin Chung, Kaohsiung, TW;

Chih-Tang Peng, Zhubei, TW;

Tien-I Bao, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda Jefferson

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823878 (2013.01); H01L 21/0223 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/76229 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/7846 (2013.01); H01L 21/0234 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/845 (2013.01); H01L 29/41791 (2013.01); H01L 29/7843 (2013.01);
Abstract

A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure, a second protruding structure, and a third protruding structure over a substrate. The method also includes performing a depositing process to form a first insulation material layer between the first protruding structure and the second protruding structure. The method further includes performing a first insulation material conversion process onto the first insulation material layer to bend the first protruding structure and the second protruding structure toward opposite directions.

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