The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Dec. 23, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zhongyuan Lu, Boise, ID (US);
Robert John Gleixner, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 29/1201 (2013.01); G11C 29/12005 (2013.01); G11C 29/4401 (2013.01);
Abstract
Systems, methods, and apparatus to evaluate read margin when reading memory cells in a memory device. In one approach, a controller of a memory device applies an initial read voltage of an initial polarity to memory cells. Errors from the read are used to determine whether read retry is needed. If so, a pre-read voltage of an opposite polarity is applied, and errors determined. Based on the errors from applying the pre-read voltage, a polarity is selected for the read retry voltage. The read retry voltage of the selected polarity is then applied to the memory cells.