The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Aug. 04, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/85 (2023.01); H10N 70/20 (2023.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 61/22 (2023.02); H10B 63/30 (2023.02); H10N 50/85 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/20 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/881 (2023.02); H10N 70/8825 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); H01L 23/528 (2013.01); H01L 23/53238 (2013.01); H10B 63/80 (2023.02); H10B 63/84 (2023.02); H10N 50/80 (2023.02); H10N 70/021 (2023.02);
Abstract
A memory cell includes: a first contact feature partially embedded in a first dielectric layer; a barrier layer, lining the first contact feature, that comprises a first portion disposed between the first contact feature and first dielectric layer, and a second portion disposed above the first dielectric layer; a resistive material layer disposed above the first contact feature, the resistive material layer coupled to the first contact feature through the second portion of the barrier layer; and a second contact feature embedded in a second dielectric layer above the first dielectric layer.