The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Oct. 11, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Hu Wang, Shanghai, CN;
Shan Shan Wang, Shanghai, CN;
Feng Qiu, Shanghai, CN;
Wei Hu Zhang, Shanghai, CN;
Abstract
A semiconductor device includes a substrate; a gate structure, located over the substrate, the gate structure including a first gate oxide layer, a second gate oxide layer, and a silicon layer. The first gate oxide layer is over the substrate, and the first gate oxide layer has a sloped sidewall on one side and a vertical sidewall on another side. The second gate oxide layer is over the substrate and on the sloped sidewall of the first gate oxide layer, and a thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer. The silicon layer is formed over the first gate oxide layer and the second gate oxide layer.