The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Apr. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Chu-bei, TW;

Yao-Jen Yang, Hsinchu County, TW;

Min-Shin Wu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 11/408 (2006.01); G11C 11/56 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 11/5642 (2013.01);
Abstract

A memory bit cell includes a first memory cell including a first antifuse transistor and a first selection transistor, the first antifuse transistor being selectable between a first state or a second state in response to a word line program signal, the first selection transistor being configured to provide access to the first antifuse transistor in response to a word line read signal; a second memory cell including a second antifuse transistor and a second selection transistor, the second antifuse transistor being selectable between the first state or the second state in response to the word line program signal, the second selection transistor being configured to provide access to the second antifuse transistor in response to the word line read signal; a first word line to selectively provide the word line program signal; a second word line to selectively provide the word line read signal; and a bit line.


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