The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Jun. 15, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yung-Hsiang Chen, Tainan, TW;

Hung-San Lu, Kaohsiung, TW;

Ting-Ying Wu, Tainan, TW;

Chuang Chihchous, Fongshan, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 17/06 (2006.01); C25D 7/12 (2006.01); C25D 17/00 (2006.01);
U.S. Cl.
CPC ...
C25D 17/06 (2013.01); C25D 7/12 (2013.01); C25D 17/001 (2013.01); C25D 17/002 (2013.01);
Abstract

A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.


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