The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Mar. 05, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Toshiyasu Fujimoto, Higashihiroshima, JP;
Assignee:
MICRON TECHNOLOGY, INC., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H10B 12/053 (2023.02); H10B 12/315 (2023.02);
Abstract
Disclosed herein is a method that includes forming a gate trench in a semiconductor substrate, forming a gate insulating film on an inner wall of the gate trench, forming a gate electrode in the gate trench via the gate insulating film, ashing a top surface of the gate electrode to form a first insulating film, and forming a gate cap insulating film embedded in the gate trench to cover the first insulating film.
Fujimoto, Toshiyasu. (2023). Semiconductor device having gate trench (U.S. Patent No. 11812606). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11812606
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile