The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jul. 06, 2021
International Business Machines Corporation, Armonk, NY (US);
Jing Guo, Niskayuna, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
Su Chen Fan, Cohoes, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods are presented for forming multi-threshold field effect transistors. The methods generally include depositing and patterning an organic planarizing layer to protect underlying structures formed in a selected one of the nFET region and the pFET region of a semiconductor wafer. In the other one of the nFET region and the pFET region, structures are processed to form an undercut in the organic planarizing layer. The organic planarizing layer is subjected to a reflow process to fill the undercut. The methods are effective to protect a boundary between the nFET region and the pFET region.