The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jan. 28, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hironari Sasagawa, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01J 2237/334 (2013.01);
Abstract
An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.