The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
May. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/82 (2012.01); H01L 21/67 (2006.01); G03F 7/00 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/82 (2013.01); B08B 7/0035 (2013.01); B08B 7/0071 (2013.01); G03F 7/70033 (2013.01); G03F 7/70733 (2013.01); G03F 7/70925 (2013.01); H01L 21/67028 (2013.01); H01L 21/67225 (2013.01);
Abstract
A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.