The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Jun. 01, 2021
Applicant:

Adeia Semiconductor Bonding Technologies, Inc., San Jose, CA (US);

Inventor:

Jeremy Alfred Theil, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); H01L 21/0217 (2013.01); H01L 21/31111 (2013.01); H01L 24/83 (2013.01); H01L 2224/83031 (2013.01); H01L 2224/83896 (2013.01);
Abstract

Improved bonding surfaces for microelectronics are provided. An example method of protecting a dielectric surface for direct bonding during a microelectronics fabrication process includes overfilling cavities and trenches in the dielectric surface with a temporary filler that has an approximately equal chemical and mechanical resistance to a chemical-mechanical planarization (CMP) process as the dielectric bonding surface. The CMP process is applied to the temporary filler to flatten the temporary filler down to the dielectric bonding surface. The temporary filler is then removed with an etchant that is selective to the temporary filler, but nonreactive toward the dielectric surface and toward inner surfaces of the cavities and trenches in the dielectric bonding surface. Edges of the cavities remain sharp, which minimizes oxide artifacts, strengthens the direct bond, and reduces the bonding seam.


Find Patent Forward Citations

Loading…