The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jan. 10, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 50/01 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/24 (2023.02); H10N 50/01 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/20 (2023.02); H10N 70/801 (2023.02); H10N 70/826 (2023.02);
Abstract
A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) structure, an inner spacer, and an outer spacer. The MTJ structure is over the bottom electrode. The bottom electrode has a top surface extending past opposite sidewalls of the MTJ structure. The inner spacer contacts the top surface of the bottom electrode and one of the opposite sidewalls of the MTJ structure. The outer spacer contacts an outer sidewall of the inner spacer. The outer spacer protrudes from a top surface of the inner spacer by a step height.