The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Nov. 06, 2020
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Yung-Sheng Lin, Kaohsiung, TW;
Yun-Ching Hung, Kaohsiung, TW;
An-Hsuan Hsu, Kaohsiung, TW;
Chung-Hung Lai, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/10145 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13541 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/8102 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81232 (2013.01);
Abstract
A semiconductor package includes a first substrate, a first flow channel and a second flow channel. The first flow channel is on the first substrate. The second flow channel is on the first substrate and in fluid communication with the first flow channel. The second flow channel is spaced from an inlet and an outlet of the first flow channel. The first flow channel and the second flow channel constitute a bonding region of the first substrate.