The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Feb. 03, 2022
Applicant:
Tessera Llc, San Jose, CA (US);
Inventors:
Zhenxing Bi, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Peng Xu, Guilderland, NY (US);
Wenyu Xu, Albany, NY (US);
Assignee:
Tessera LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01); H01L 29/6681 (2013.01);
Abstract
Semiconductor devices and methods of forming a first layer cap at ends of layers of first channel material in a stack of alternating layers of first channel material and second channel material. A second layer cap is formed at ends of the layers of second channel material. The first layer caps are etched away in a first device region. The second layer caps are etched away in a second device region.