The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Nov. 11, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Diwakar Kedlaya, San Jose, CA (US);

Fang Ruan, Milpitas, CA (US);

Zubin Huang, Santa Clara, CA (US);

Ganesh Balasubramanian, Fremont, CA (US);

Kaushik Alayavalli, Sunnyvale, CA (US);

Martin Seamons, San Jose, CA (US);

Kwangduk Lee, Redwood City, CA (US);

Rajaram Narayanan, Santa Clara, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G01N 21/3504 (2014.01); G01N 21/25 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23C 16/52 (2013.01); G01N 21/255 (2013.01); G01N 21/3504 (2013.01); H01L 21/67253 (2013.01);
Abstract

A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.


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