The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 26, 2020
Applicant:

American Air Liquide, Inc., Fremont, CA (US);

Inventor:

Fabrizio Marchegiani, Wilmington, DE (US);

Assignee:

American Air Liquide, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/3115 (2006.01); H01L 27/11578 (2017.01); H01L 27/1157 (2017.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0234 (2013.01); H01L 21/02321 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/3115 (2013.01); H01L 21/32137 (2013.01); H10B 43/20 (2023.02); H10B 43/35 (2023.02);
Abstract

Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CHFI, wherein 4≤n≤10, 0≤x≤21, 0≤y≤21, and 1≤z≤4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.


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