The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Mar. 11, 2005
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Scott Sheppard, Chapel Hill, NC (US);
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Scott Sheppard, Chapel Hill, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A spacer layer is on at least part of the surface of the plurality of active region between the gate and the drain electrode and between the gate and the source electrode. A field plate is on the spacer layer and extends on the spacer and over the active region toward the drain electrode. The field plate also extends on the spacer layer over the active region and toward the source electrode. At least one conductive path electrically connects the field plate to the source electrode or the gate.