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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11791263 B1

PDFFull Text
Date of Patent:
Oct. 17, 2023

Filed:

Dec. 17, 2021

Metallization lines on integrated circuit products

Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Lars Liebmann, Mechanicville, NY (US);

Daniel Chanemougame, Troy, NY (US);

Geng Han, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:

Francois Pagette

Hoffman Warnick LLC

Primary Examiner:

Mark W Tornow

Assistant Examiner:

Abbigale A Boyle

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/76814 (2013.01); H01L 21/76832 (2013.01); H01L 21/76835 (2013.01); H01L 21/76861 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01);
Abstract

An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The first layer of insulating material has a lowermost surface positioned above an uppermost surface of a gate of a transistor in a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure. The conductive metallization line has a long axis extending along the first and second portions.

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