The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Dec. 14, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Anthony R. Schepis, Averill Park, NY (US);

Hoyoung Kang, Schenectady, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/321 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 21/32137 (2013.01); H01L 21/32105 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A method of processing a substrate includes forming a channel through a substrate, depositing a layer of polycrystalline silicon on sidewalls of the channel, and oxidizing uncovered surfaces of the polycrystalline silicon with an oxidation agent. The oxidizing agent causes formation of an oxidized layer, the oxidized layer having a uniform thickness on uncovered surfaces of the polycrystalline silicon. The method includes removing the oxidized layer from the channel with a removal agent, and repeating steps of oxidizing uncovered surfaces and removing the oxidized layer until removing a predetermined amount of the layer of polycrystalline silicon.


Find Patent Forward Citations

Loading…