The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Aug. 07, 2018
Siltectra Gmbh, Dresden, DE;
Marko Swoboda, Dresden, DE;
Christian Beyer, Freiberg, DE;
Ralf Rieske, Dresden, DE;
Albrecht Ullrich, Dresden, DE;
Jan Richter, Dresden, DE;
Siltectra GmbH, Dresden, DE;
Abstract
The invention relates to a production facility () for detaching wafers () from donor substrates (). According to the invention, the production facility comprises at least one analysis device () for determining at least one individual property, particularly the doping, of the respective donor substrate (), a data device () for producing donor substrate process data for individual donor substrates (), wherein the donor substrate process data comprise analysis data of the analysis device (), and the analysis data describe at least the individual property of the donor substrate (), a laser device () for producing modifications () inside the donor substrate () in order to form a region of detachment () inside the respective donor substrate (), wherein the laser device () can be operated according to the donor substrate process data of a concrete donor substrate () for the machining of the concrete donor substrate (), and a detachment device () for producing mechanical voltages inside the respective donor substrate () for triggering and/or guiding a crack for separating respectively at least one wafer () from a donor substrate ().