The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Dec. 20, 2019
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventors:
Kingyuen Wong, Zhuhai, CN;
Han-Chin Chiu, Zhuhai, CN;
Ming-Hong Chang, Zhuhai, CN;
Chunhua Zhou, Zhuhai, CN;
Jinhan Zhang, Zhuhai, CN;
Assignee:
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/1029 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 2924/13064 (2013.01);
Abstract
A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.