The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Nov. 17, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Hong Yu, Clifton Park, NY (US);
Jagar Singh, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
John J. Pekarik, Underhill, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
The disclosure provides a lateral bipolar transistor structure with a base layer over a semiconductor buffer, and related methods. A lateral bipolar transistor structure may include an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A semiconductor buffer is adjacent the insulator. A base layer is on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer. The base layer has a second doping type opposite the first doping type.