The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Feb. 18, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Sheng Chang, Hsinchu, TW;
Shao-Yu Chou, Hsinchu, TW;
Yao-Jen Yang, Hsinchu, TW;
Chen-Ming Hung, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An IC device includes a first anti-fuse structure including a first dielectric layer between a first gate conductor and a first active area, and a second anti-fuse structure including a second dielectric layer between a second gate conductor and the first active area. A first via is electrically connected to the first gate conductor at a first location a first distance from the first active area, a second via is electrically connected to the second gate conductor at a second location a second distance from the first active area, and the first distance is approximately equal to the second distance.