The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Sep. 25, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Jodi Grzeskowiak, Schenectady, NY (US);
Anthony Schepis, Albany, NY (US);
Anton Devilliers, Clifton Park, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); G03F 7/004 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/0045 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); H01L 21/0276 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01);
Abstract
A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.