The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Nov. 20, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Cheng-Hong Wei, Taichung, TW;

Chien-Hsiang Yu, Taichung, TW;

Hung-Sheng Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 63/00 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02);
Abstract

A RRAM and its manufacturing method are provided. The RRAM includes a first dielectric layer formed on a substrate, and two memory cells. The two memory cells include two bottom electrode structures separated from each other. Each bottom electrode structure fills one of two trenches in the first dielectric layer. The two memory cells also include a resistance switching layer and a top electrode structure. The resistance switching layer is conformity formed on the surface of an opening in the first dielectric layer, and the opening is between the two trenches. The top electrode structure is on the resistance switching layer and fills the opening. A top surface of the first dielectric layer, top surfaces of the bottom electrode structures, a top surface of the resistance switching layer, and a top surface of the top electrode structure are coplanar.


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