The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

May. 13, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hidehiro Fujiwara, Hsinchu, TW;

Wei-Min Chan, New Taipei, TW;

Chih-Yu Lin, Taichung, TW;

Yen-Huei Chen, Hsinchu County, TW;

Hung-Jen Liao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 27/02 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 21/321 (2013.01); H01L 21/76838 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01);
Abstract

A device is disclosed that includes a fin structure disposed below a first metal layer, extending along a column direction, and corresponding to at least one transistor of a memory bit cell, a word line disposed in the first metal layer and extending along a row direction, a first metal island disposed in the first metal layer separated from the word line, and a first connection metal line disposed in a second metal layer above the first metal layer, extending along the column direction, and configured to couple a power supply through the first metal island to the fin structure. In a layout view, the first connection metal line is separated from the fin structure, and the fin structure crosses over the word line and the first metal island. A method is also disclosed herein.


Find Patent Forward Citations

Fujiwara, Hidehiro. (2023). Sram cell word line structure with reduced rc effects (U.S. Patent No. 11778802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11778802

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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