The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Sep. 07, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Chen Zhang, Guilderland, NY (US);
Jingyun Zhang, Albany, NY (US);
Junli Wang, Slingerlands, NY (US);
Pietro Montanini, Albany, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); H01L 29/40 (2006.01); H01L 27/092 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 27/0922 (2013.01); H01L 29/0649 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01); B82Y 10/00 (2013.01);
Abstract
A stacked transistor device is provided. The stacked transistor device includes a nanosheet transistor device on a substrate; and a fin field effect transistor device over the nanosheet transistor device to form the stacked transistor device, wherein the fin field effect transistor device is configured to have a current flow through the fin field effect transistor device perpendicular to a current flow through the nanosheet transistor device.