The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Mar. 13, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Luping Li, Santa Clara, CA (US);

Jacqueline S. Wrench, San Jose, CA (US);

Wen Ting Chen, Santa Clara, CA (US);

Yixiong Yang, Fremont, CA (US);

In Seok Hwang, Pleasanton, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); C23C 16/20 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); C23C 16/14 (2013.01); C23C 16/20 (2013.01); C23C 16/45553 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 21/67167 (2013.01);
Abstract

Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.


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