The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Oct. 24, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zhenlei Shen, Milpitas, CA (US);
Tingjun Xie, Milpitas, CA (US);
Frederick Adi, Castro Valley, CA (US);
Wei Wang, Dublin, CA (US);
Zhenming Zhou, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 11/07 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/076 (2013.01); G06F 11/0757 (2013.01); G06F 11/0772 (2013.01);
Abstract
A first error rate based on a first read operation performed on a memory device is obtained. An individual data unit of the memory device that satisfies a first threshold criterion associated with a defect candidate is determined. A defect verification operation on the individual data unit to obtain a second error rate is performed. The individual data unit that satisfies a second threshold criterion associated with a defect is determined.