The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Sep. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seongsue Kim, Seoul, KR;

Dongwan Kim, Seongnam-si, KR;

Hwanseok Seo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/24 (2013.01);
Abstract

Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.


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