The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Jun. 22, 2021
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Kouhei Sasamoto, Joetsu, JP;

Hideo Kaneko, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01);
Abstract

In a photomask blank including a transparent substrate and a first inorganic film containing either or both of a transition metal and silicon, and optional a second inorganic film containing either or both of a transition metal and silicon, when an intensity of secondary ions is measured in the thickness direction of the transparent substrate and the inorganic films by TOF-SIMS with using a primary ion source of Bi and a sputtering ion source of Cs, an intensity of secondary ions containing carbon detected at the interface of the transparent substrate and the inorganic film or the inorganic films is higher than both intensities of the secondary ions containing carbon detected, respectively, at the sides remote from the interface.


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