The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11770987 B1

Date of Patent:

Sep. 26, 2023

Filed:

Sep. 30, 2021

Resistive random-access memory and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Shu-Hung Yu, Kaohsiung, TW;

Chun-Hung Cheng, Kaohsiung, TW;

Chuan-Fu Wang, Miaoli County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsinchu, TW;

Attorney:

WPAT, P.C

Primary Examiner:

Fernando Hidalgo

Int. Cl.

CPC ...

G06F 12/02 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01);

U.S. Cl.

CPC ...

H10N 70/841 (2023.02); H10B 63/80 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/8833 (2023.02);

Abstract

A ReRAM device includes a dielectric layer, a bottom electrode, a data storage layer, a metal covering layer, and a top electrode. The dielectric layer has a recess. At least a portion of the bottom electrode is exposed through the recess. The data storage layer is disposed on a sidewall and a bottom surface of the recess, electrically contacts with the bottom electrode, and has a top portion lower than an opening of the recess. The metal covering layer blanket covers the data storage layer, has an extension portion covering the top portion, and connects to the sidewall of the recess. The top electrode is disposed in the recess, and is electrically contact with the metal covering layer.

Find Patent Forward Citations