The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Jan. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc Nanjing Company Limited, Nanjing, CN;
Tsmc China Company Limited, Shanghai, CN;
Tian-Yu Xie, Shanghai, CN;
Xin-Yong Wang, Shanghai, CN;
Lei Pan, Shanghai, CN;
Kuo-Ji Chen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC NANJING COMPANY LIMITED, Nanjing, CN;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
An IC structure includes first and second gates, first and second source/drain regions, and an isolation region. The first and second gates each have a first portion extending along a first direction and a second portion extending along a second direction. The first source/drain regions are respectively on opposite sides of the first portion of the first gate. The second source/drain regions are respectively on opposite sides of the first portion of the second gate. The isolation region has a lower portion between a first one of the first source/drain regions and a first one of the second source/drain regions, and an upper portion partially overlapping with the second portion of first gate and the second portion of the second gate. A width of the lower portion is a less than a width of the upper portion.