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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11769770 B1

PDFFull Text
Date of Patent:
Sep. 26, 2023

Filed:

May. 06, 2021

Methods of forming a semiconductor device having an air spacer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Lien Huang, Hsinchu County, TW;

Che-Ming Hsu, Hsinchu, TW;

Ching-Feng Fu, Taichung, TW;

Huan-Just Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/7682 (2013.01); H01L 21/76834 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/5222 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 2221/1063 (2013.01);
Abstract

A semiconductor device includes a substrate, a semiconductor fin, a shallow trench isolation (STI) structure, an air spacer, and a gate structure. The semiconductor fin extends upwardly from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The air spacer is interposed the STI structure and the semiconductor fin. The gate structure extends across the semiconductor fin.

Find Patent Forward Citations

Huang, Yu-Lien. (2023). Methods of forming a semiconductor device having an air spacer (U.S. Patent No. 11769770). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11769770

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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