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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11769542 B1

PDFFull Text
Date of Patent:
Sep. 26, 2023

Filed:

Oct. 14, 2021

Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Chandra Mouli, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

F. Daniel Gealy, Kuna, ID (US);

Assignee:

Micron Technology, Inc, Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Marcos D Pizarro

Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
G11C 11/223 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/6684 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7887 (2013.01); H01L 29/7889 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02);
Abstract

A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.

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Karda, Kamal. (2023). Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator (U.S. Patent No. 11769542). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11769542

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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