The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jan. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ming-Hsien Tsai, Hsinchu, TW;

Shang-Ying Tsai, Pingzhen, TW;

Fu-Lung Hsueh, Kaohsiung, TW;

Shih-Ming Yang, Tainan, TW;

Jheng-Yuan Wang, Taichung, TW;

Ming-De Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 10/81 (2023.01); H10N 10/17 (2023.01); H10N 10/01 (2023.01); H10N 10/855 (2023.01);
U.S. Cl.
CPC ...
H10N 10/17 (2023.02); H10N 10/01 (2023.02); H10N 10/81 (2023.02); H10N 10/855 (2023.02);
Abstract

A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.


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