The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Nov. 09, 2020
Wolfspeed, Inc., Durham, NC (US);
Woongsun Kim, Cary, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
Naeem Islam, Morrisville, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type and a well region of a second conductivity type, a plurality of gate trenches including respective gate insulating layers and gate electrodes therein extending into the drift region, respective shielding patterns of the second conductivity type in respective portions of the drift region adjacent the gate trenches, and respective conduction enhancing regions of the first conductivity type in the respective portions of the drift region. The drift region comprises a first concentration of dopants of the first conductivity type, and the respective conduction enhancing regions comprise a second concentration of the dopants of the first conductivity type that is higher than the first concentration. Related devices and fabrication methods are also discussed.