The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jun. 14, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Yu-Xuan Huang, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Wei Ju Lee, Hsinchu, TW;
Chun-Fu Cheng, Hsinchu County, TW;
Chung-Wei Wu, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides an integrated circuit that includes a circuit formed on a semiconductor substrate; and a de-cap device formed on the semiconductor substrate and integrated with the circuit. The de-cap device includes a filed-effect transistor (FET) that further includes a source and a drain connected through contact features landing on the source and drain, respectively; a gate stack overlying a channel and interposed between the source and the drain; and a doped feature disposed underlying the channel and connecting to the source and the drain, wherein the doped feature is doped with a dopant of a same type of the source and the drain.