The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jun. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tzu-Hao Chiang, Hsinchu, TW;

Wun-Jie Lin, Hsinchu, TW;

Jam-Wem Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01);
Abstract

A semiconductor device includes a P-doped well having a first concentration of P-type dopants in the substrate; a P-doped region having a second concentration of P-type dopants in the substrate and extending around a perimeter of the P-doped well; a shallow trench isolation structure (STI) between the P-doped well and the P-doped region; an active area on the substrate, the active area including an emitter region and a collector region; a deep trench isolation structure (DTI) extending through the active area and between the emitter region and the collector region; and an electrical connection between the emitter region and the P-doped region.


Find Patent Forward Citations

Chiang, Tzu-Hao. (2023). Electrostatic discharge protection device (U.S. Patent No. 11756953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11756953

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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