The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jan. 28, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chien-Hao Chen, Ilan County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first metal gate structure and a second metal gate structure. The first metal gate structure includes a first high-k gate dielectric layer, a first work function metal layer over the first high-k gate dielectric layer, and an N-containing barrier layer between the first high-k gate dielectric layer and the first work function metal layer. The second metal gate structure includes a second high-k gate dielectric layer and a second work function metal layer over the second high-k gate dielectric layer. The first high-k gate dielectric layer and the second high-k gate dielectric layer include a same metal material. The first high-k gate dielectric layer has a first metal concentration, the second high-k gate dielectric layer has a second metal concentration, and the first metal concentration is less than the second metal concentration.