The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Nov. 20, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shen-Nan Lee, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Chen-Hao Wu, Hsinchu, TW;
Chu-An Lee, Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Tsung-Ling Tsai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76831 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01);
Abstract
A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.