The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Sep. 28, 2020
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Shiliang Ji, Shanghai, CN;

Panpan Liu, Shanghai, CN;

Haiyang Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0273 (2013.01); H01L 21/0276 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/0332 (2013.01);
Abstract

The present disclosure provides a method for forming a semiconductor structure. The method includes providing a target etching layer; sequentially forming an initial mask layer, an anti-reflection layer, and a patterned structure on the target etching layer; performing a first etching process on the anti-reflection layer to remove a surface portion of the anti-reflection layer using the patterned structure as a mask; performing a surface treatment process on the patterned structure; and performing a second etching process on the anti-reflection layer until exposing a surface of the initial mask layer.


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