The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Oct. 19, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Che-Yu Lin, Hsinchu, TW;
Ming-Hua Yu, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Chan-Lon Yang, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 23/544 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02057 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 23/544 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/167 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract
A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer is formed on the top surface of the substrate. The epitaxial layer is patterned to form a fin.