The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Dec. 31, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Bo-Rong Chen, Hsinchu County, TW;
Che-Hung Huang, Hsinchu, TW;
Chun-Ming Chang, Kaohsiung, TW;
Yi-Shan Hsu, Taipei, TW;
Chih-Tung Yeh, Taoyuan, TW;
Shin-Chuan Huang, Tainan, TW;
Wen-Jung Liao, Hsinchu, TW;
Chun-Liang Hou, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/7783 (2013.01);
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.