The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Mar. 23, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hong-Yan Chen, San Jose, CA (US);

Yingda Dong, Los Altos, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3436 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3413 (2013.01);
Abstract

Control logic in a memory device initiates a program operation on the memory device, and causes a program voltage to be applied to a selected wordline of the memory array during a program phase of the program operation. The control logic further causes a select gate drain coupled with a string of memory cells in the memory array to deactivate during a recovery phase after applying the program voltage, wherein the string of memory cells comprises a plurality of memory cells, and wherein each memory cell of the plurality of memory cells is coupled to a corresponding wordline of a plurality of wordlines in the memory array.


Find Patent Forward Citations

Loading…